IGZO displays are made with an artificially produced transparent oxide semiconductor that Sharp is the first in the world to successfully mass produce. Composed of Indium, Gallium, Zinc, and Oxygen, IGZO moves beyond traditional TFT LCD technology with electron mobility far higher than Amorphous Silicon (a-Si) displays

A crystal of elements that were considered difficult to crystalize, a new atomic arrangement is achieved in IGZO. This allows unique features like further enhanced picture resolution capability with high levels of efficiency, performance and reliability.

The high electron mobility rate of IGZO successfully enables unprecedented transistor miniaturization and circuit thinning. By raising the light transmission amount of each pixel, twice the resolution is achieved for the same transmittance.

IGZO’s Pause Driving Method capitalizes on High OFF Resistance. Utilizing this improved pixel performance, IGZO reduces power consumption to one-fifth or even one-tenth that of conventional screens, which contributes to longer product battery life.

IGZO is an intermittently operational type of semiconductor, meaning that noise generation affecting the touch panel detector circuits is very brief. This allows for detection of even the faintest signals, enabling highly accurate PCAP (Projected Capacitive) touch and pen input.

Writing or drawing on an IGZO powered display has the same natural feel as on paper.